The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2016
Filed:
Jul. 08, 2015
Applicant:
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Inventors:
Assignee:
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/04 (2006.01); H01L 21/268 (2006.01); H01L 21/285 (2006.01); H01L 21/304 (2006.01); H01L 29/16 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0485 (2013.01); H01L 21/0475 (2013.01); H01L 21/268 (2013.01); H01L 21/28568 (2013.01); H01L 21/304 (2013.01); H01L 29/1608 (2013.01); H01L 29/45 (2013.01);
Abstract
A method of manufacturing a silicon carbide semiconductor device includes the steps of preparing a silicon carbide substrate, forming a first electrode on the silicon carbide substrate, establishing ohmic contact between the silicon carbide substrate and the first electrode by irradiating the first electrode with laser beams, and forming a second electrode on the first electrode. In the step of establishing ohmic contact, a surface of the first electrode is irradiated with laser beams such that arithmetic mean roughness of a surface of the second electrode is not greater than 0.2 μm.