The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2014

Filed:

Nov. 17, 2011
Applicants:

Hideto Tamaso, Osaka, JP;

Hiromu Shiomi, Osaka, JP;

Inventors:

Hideto Tamaso, Osaka, JP;

Hiromu Shiomi, Osaka, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/425 (2006.01); H01L 29/66 (2006.01); H01L 21/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66068 (2013.01); H01L 21/046 (2013.01);
Abstract

A method for manufacturing a semiconductor device includes the steps of: preparing a substrate made of silicon carbide; forming, on one main surface of the substrate, a detection film having a light transmittance different from that of silicon carbide; confirming presence of the substrate by applying light to the detection film; and forming an active region in the substrate whose presence has been confirmed.


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