The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2021
Filed:
Nov. 13, 2017
Sumitomo Electric Industries, Ltd., Osaka, JP;
SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka, JP;
Abstract
A semiconductor device includes a first JTE region formed around an active portion, a second JTE region formed around the first JTE region, and a third JTE region formed around the second JTE region. The first, second, and third JTE regions are doped with an impurity of a second conductivity type different from a first conductivity type. A concentration ratio R'(concentration of impurity in second JTE region)/(concentration of impurity in first JTE region)' and a concentration ratio R'(concentration of impurity in third JTE region)/(concentration of impurity in second JTE region)' are 0.50 or greater and 0.65 or less. A width Wof the first JTE region, a width Wof the second JTE region, and a width Wof the third JTE region are 130 μm or greater and 190 μm or less.