The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2014
Filed:
Feb. 25, 2011
Keiji Wada, Osaka, JP;
Takeyoshi Masuda, Osaka, JP;
Tomihito Miyazaki, Osaka, JP;
Toru Hiyoshi, Osaka, JP;
Satomi Itoh, Osaka, JP;
Hiromu Shiomi, Osaka, JP;
Keiji Wada, Osaka, JP;
Takeyoshi Masuda, Osaka, JP;
Tomihito Miyazaki, Osaka, JP;
Toru Hiyoshi, Osaka, JP;
Satomi Itoh, Osaka, JP;
Hiromu Shiomi, Osaka, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Abstract
A method of cleaning a SiC semiconductor includes the steps of forming an oxide film at the surface of a SiC semiconductor, and removing the oxide film. At the step of forming an oxide film, an oxide film is formed using ozone water having a concentration greater than or equal to 30 ppm. The forming step preferably includes the step of heating at least one of the surface of the SiC semiconductor and the ozone water. Thus, there can be obtained a method of cleaning a SiC semiconductor that can exhibit cleaning effect on the SiC semiconductor.