The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2013
Filed:
Sep. 28, 2010
Taro Nishiguchi, Itami, JP;
Makoto Sasaki, Itami, JP;
Shin Harada, Osaka, JP;
Kyoko Okita, Itami, JP;
Hiroki Inoue, Itami, JP;
Shinsuke Fujiwara, Itami, JP;
Yasuo Namikawa, Itami, JP;
Taro Nishiguchi, Itami, JP;
Makoto Sasaki, Itami, JP;
Shin Harada, Osaka, JP;
Kyoko Okita, Itami, JP;
Hiroki Inoue, Itami, JP;
Shinsuke Fujiwara, Itami, JP;
Yasuo Namikawa, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;
Abstract
At least one single crystal substrate, each having a backside surface and made of silicon carbide, and a supporting portion having a main surface and made of silicon carbide, are prepared. In this preparing step, at least one of the backside surface and main surface is formed by machining. By this forming step, a surface layer having distortion in the crystal structure is formed on at least one of the backside surface and main surface. The surface layer is removed at least partially. Following this removing step, the backside surface and main surface are connected to each other.