The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2014
Filed:
Sep. 21, 2007
Applicants:
Takeyoshi Masuda, Osaka, JP;
Yasuo Namikawa, Osaka, JP;
Inventors:
Takeyoshi Masuda, Osaka, JP;
Yasuo Namikawa, Osaka, JP;
Assignee:
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/808 (2006.01); H01L 29/66 (2006.01); H01L 21/04 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/808 (2013.01); H01L 29/66901 (2013.01); H01L 29/1608 (2013.01); H01L 21/048 (2013.01); H01L 29/2003 (2013.01); H01L 29/1066 (2013.01);
Abstract
On a pepitaxial layer, an n-type epitaxial layer and a gate region are formed in this order. A gate electrode is electrically connected to the gate region, and a source electrode and a drain electrode are spaced apart from each other with the gate electrode sandwiched therebetween. A control electrode is used for applying to the pepitaxial layer a voltage that causes a reverse biased state of the pepitaxial layer and the n-type epitaxial layer in an OFF operation.