Sumitomo Electric Industries, Limited

Makoto Sasaki

Shin Harada

Taro Nishiguchi

Shinsuke Fujiwara

Yasuo Namikawa

Kyoko Okita

Tsutomu Hori

Takeyoshi Masuda

Keiji Wada

Tomohiro Kawase

Tomihito Miyazaki

Hiroki Inoue

Tsubasa Honke

Satomi Itoh

A semiconductor device has a semiconductor layer and a substrate. The semiconductor layer constitutes at least a part of a current path, and is made of silicon carbide. The substrate has a first surface supporting the semiconductor layer, and a second surface opposite to the first surface. Further, the substrate is made of silicon carbide having a 4H type single-crystal structure. Further, the substrate has a physical property in which a ratio of a peak strength in a wavelength of around 500 nm to a peak strength in a wavelength of around 390 nm is 0.1 or smaller in photoluminescence measurement. In this way, the semiconductor device is obtained to have a low on-resistance.

Semiconductor device and method for manufacturing same

A silicon carbide ingot includes an end surface and an end surface opposite to the end surface. In the silicon carbide ingot, the end surface and the end surface face each other in a growth direction, and a gradient of a nitrogen concentration in the growth direction is not less than 1&#xd7;10cmand not more than 1&#xd7;10cm.

Silicon carbide ingot and method for manufacturing silicon carbide substrate

An SiC crystal () has Fe concentration not higher than 0.1 ppm and Al concentration not higher than 100 ppm. A method of manufacturing an SiC crystal includes the following steps. SiC powders for polishing are prepared as a first source material (). A first SiC crystal () is grown by sublimating the first source material () through heating and precipitating an SiC crystal. A second source material () is formed by crushing the first SiC crystal (). A second SiC crystal () is grown by sublimating the second source material () through heating and precipitating an SiC crystal. Thus, an SiC crystal and a method of manufacturing an SiC crystal capable of achieving suppressed lowering in quality can be obtained.

Silicon carbide crystal and method of manufacturing silicon carbide crystal

A silicon carbide substrate, a silicon carbide ingot, and methods for manufacturing the silicon carbide substrate and the silicon carbide ingot capable of improving a yield of a semiconductor device having silicon carbide as constituent material are provided. In the silicon carbide substrate, patterns formed by crossing straight lines extending along the &#x3c;11-20&#x3e; direction and being observable by means of an X-ray topography are present at a number density of less than or equal to 0.1 patterns/cmon one main surface. As described above, in the silicon carbide substrate, the number density of the crossing patterns present on the main surface is reduced to less than or equal to 0.1 patterns/cm. Therefore, when the semiconductor device is manufactured with use of a silicon carbide substrate, a lowering of a yield caused by the crossing patterns can be suppressed.

Silicon carbide substrate, silicon carbide ingot, and methods for manufacturing silicon carbide substrate and silicon carbide ingot

An ingot in which generation of crack is sufficiently suppressed is obtained. The ingot includes: a seed substrate formed of silicon carbide; and a silicon carbide layer grown on the seed substrate and containing nitrogen atoms. The silicon carbide layer has a thickness of 15 mm or more in a growth direction. In the silicon carbide layer, a concentration gradient of the nitrogen atoms in the growth direction is 5&#xd7;10atoms/cmor less.

Ingot, silicon carbide substrate, and method for producing ingot

A seed crystal having a frontside surface and a backside surface is prepared. Surface roughness of the backside surface of the seed crystal is increased. A coating film including carbon is formed on the backside surface of the seed crystal. The coating film and a pedestal are brought into contact with each other with an adhesive interposed therebetween. The adhesive is cured to fix the seed crystal to the pedestal. A single crystal is grown on the seed crystal. Before the growth is performed, a carbon film is formed by carbonizing the coating film.

Method of manufacturing single crystal

Each of first and second material substrates made of single crystal silicon carbide has first and second back surfaces, first and second side surfaces, and first and second front surfaces. The first and second back surfaces are connected to a supporting portion. The first and second side surfaces face each other with a gap interposed therebetween, the gap having an opening between the first and second front surfaces. A closing portion for closing the gap over the opening is formed. A connecting portion for closing the opening is formed by depositing a sublimate from the first and second side surfaces onto the closing portion. The closing portion is removed. A silicon carbide single crystal is grown on the first and second front surfaces.

Method for manufacturing silicon carbide single crystal, and silicon carbide substrate

A SiC substrate includes a first orientation flat parallel to the &#x3c;11-20&#x3e; direction, and a second orientation flat being in a direction intersecting the first orientation flat and being different from the first orientation flat in length. An alternative SiC substrate has a rectangular plane shape, and a main surface of the substrate includes a first side parallel to the &#x3c;11-20&#x3e; direction, a second side in a direction perpendicular to the first side, and a third side connecting the first side to the second side. A length of the third side projected in a direction in which the first side extends is different from a length of the third side projected in a direction in which the second side extends.

Silicon carbide substrate and method of manufacturing silicon carbide substrate

A silicon carbide substrate is made of silicon carbide. In the silicon carbide substrate, a normal line of one main surface of the silicon carbide substrate and a normal line of a {03-38} plane form an angle of 0.5&#xb0; or smaller in an orthogonal projection to a plane including a &#x3c;01-10&#x3e; direction and a &#x3c;0001&#x3e; direction. In this way, there can be provided the silicon carbide substrate allowing for both improvement of channel mobility of a semiconductor device and stable characteristics thereof.

Method for manufacturing silicon carbide substrate and method for manufacturing semiconductor device

An SiC substrate includes the steps of preparing a base substrate having a main surface and made of SiC, washing the main surface using a first alkaline solution, and washing the main surface using a second alkaline solution after the step of washing with the first alkaline solution. The SiC substrate has the main surface, and an average of residues on the main surface are equal to or larger than 0.2 and smaller than 200 in number.

Silicon carbide substrate, epitaxial wafer and manufacturing method of silicon carbide substrate

A silicon carbide crystal ingot having a surface greater than or equal to 4 inches, having an n-type dopant concentration greater than or equal to 1&#xd7;10atoms/cmand less than or equal to 1&#xd7;10atoms/cm, a metal atom concentration greater than or equal to 1&#xd7;10atoms/cmand less than or equal to 1&#xd7;10atoms/cm, and not exceeding the n-type dopant concentration, and a metal atom concentration gradient less than or equal to 1&#xd7;10atoms/(cm&#xb7;mm), a silicon carbide single crystal wafer produced using the ingot, and a method for fabricating the silicon carbide crystal ingot.

Silicon carbide crystal ingot, silicon carbide crystal wafer, and method for fabricating silicon carbide crystal ingot

A single crystal silicon carbide substrate has a 4H-polytype crystal structure, has with nitrogen atoms doped as a conduction impurity with an atomic concentration of more than 1&#xd7;10/cm, and has a main surface containing a circle having a diameter of 5 cm. The single crystal silicon carbide substrate includes only one of a facet region and a non-facet region. Thus, variation in nitrogen atom concentration in the single crystal silicon carbide substrate can be suppressed.

Single crystal silicon carbide substrate and method of manufacturing the same

A silicon carbide substrate has a first layer facing a semiconductor layer and a second layer stacked on the first layer. Dislocation density of the second layer is higher than dislocation density of the first layer. Thus, quantum efficiency and power efficiency of a light-emitting device can both be high.

Growing community of inventors

Itami, Japan

Makoto Sasaki