The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2015

Filed:

Feb. 25, 2011
Applicants:

Taro Nishiguchi, Itami, JP;

Shin Harada, Osaka, JP;

Makoto Sasaki, Itami, JP;

Inventors:

Taro Nishiguchi, Itami, JP;

Shin Harada, Osaka, JP;

Makoto Sasaki, Itami, JP;

Assignee:

SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka-shi, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/20 (2006.01); H01L 21/205 (2006.01); C30B 23/02 (2006.01); C30B 23/06 (2006.01); C30B 29/36 (2006.01); C30B 33/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02631 (2013.01); C30B 23/025 (2013.01); C30B 23/063 (2013.01); C30B 23/066 (2013.01); C30B 29/36 (2013.01); C30B 33/06 (2013.01); H01L 21/02378 (2013.01); H01L 21/02447 (2013.01); H01L 21/02529 (2013.01); H01L 21/02658 (2013.01);
Abstract

Each of first and second material substrates made of single crystal silicon carbide has first and second back surfaces, first and second side surfaces, and first and second front surfaces. The first and second back surfaces are connected to a supporting portion. The first and second side surfaces face each other with a gap interposed therebetween, the gap having an opening between the first and second front surfaces. A closing portion for closing the gap over the opening is formed. A connecting portion for closing the opening is formed by depositing a sublimate from the first and second side surfaces onto the closing portion. The closing portion is removed. A silicon carbide single crystal is grown on the first and second front surfaces.


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