The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2019

Filed:

Jul. 21, 2016
Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventors:

Shunsaku Ueta, Hyogo, JP;

Kyoko Okita, Hyogo, JP;

Shin Harada, Hyogo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 23/02 (2006.01); C30B 29/36 (2006.01); H01L 21/02 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); C30B 23/025 (2013.01); C30B 29/36 (2013.01); H01L 21/02378 (2013.01);
Abstract

A silicon carbide substrate includes a carbon-surface-side principal surface and a silicon-surface-side principal surface. The silicon carbide substrate has a diameter of 100 mm or greater and a thickness of 300 μm or greater. An off angle of the carbon-surface-side principal surface and the silicon-surface-side principal surface relative to a {0001} plane is smaller than or equal to 4°. A nitrogen concentration in the carbon-surface-side principal surface is higher than a nitrogen concentration in the silicon-surface-side principal surface, and a difference in Raman peak shift between the carbon-surface-side principal surface and the silicon-surface-side principal surface is smaller than or equal to 0.2 cm.


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