Shunsaku Ueta

Title: Shunsaku Ueta: Innovator in Silicon Carbide Technology

Introduction

Shunsaku Ueta is a prominent inventor based in Itami, Japan. He has made significant contributions to the field of semiconductor technology, particularly in silicon carbide (SiC) materials. With a total of 11 patents to his name, Ueta's work has advanced the understanding and application of SiC in various industries.

Latest Patents

Ueta's latest patents focus on the development of silicon carbide single crystals and substrates. One of his notable inventions describes a middle cross-section of a silicon carbide single crystal that includes a dense region with a threading screw dislocation density significantly higher than the overall average. This innovation aims to improve the quality and performance of silicon carbide materials. Another patent details a silicon carbide substrate that incorporates a dopant, featuring a resistivity profile that varies across its structure. This substrate is designed to enhance the efficiency of electronic devices by optimizing electrical properties.

Career Highlights

Shunsaku Ueta is currently employed at Sumitomo Electric Industries, Limited, where he continues to push the boundaries of semiconductor technology. His work has not only contributed to the company's advancements but has also positioned him as a key figure in the field of materials science.

Collaborations

Ueta has collaborated with notable colleagues such as Tsutomu Hori and Kyoko Okita. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas within the semiconductor community.

Conclusion

Shunsaku Ueta's contributions to silicon carbide technology exemplify the impact of dedicated inventors in advancing modern materials. His patents reflect a commitment to innovation that continues to shape the future of semiconductor applications.