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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11913135 B1

PDFFull Text
Date of Patent:
Feb. 27, 2024

Filed:

Nov. 10, 2020

Silicon carbide substrate and method of manufacturing silicon carbide substrate

Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventors:

Kyoko Okita, Osaka, JP;

Tsubasa Honke, Osaka, JP;

Shunsaku Ueta, Osaka, JP;

Assignee:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Attorney:

Renner, Otto, Boisselle & Sklar, LLP

Primary Examiner:

Elizabeth E Mulvaney

Int. Cl.
CPC ...
C30B 29/36 (2006.01); H01L 29/16 (2006.01); H01L 29/34 (2006.01); C30B 33/10 (2006.01); C01B 32/956 (2017.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
C30B 29/36 (2013.01); C01B 32/956 (2017.08); C30B 33/10 (2013.01); H01L 21/30625 (2013.01); H01L 29/1608 (2013.01); H01L 29/34 (2013.01); C01P 2006/80 (2013.01);
Abstract

A silicon carbide substrate has a first main surface and a second main surface opposite to the first main surface. The silicon carbide substrate includes screw dislocations and pits having a maximum diameter of 1 μm or more and 10 μm or less in a direction parallel to the first main surface. When the screw dislocations and the pits are observed in the first main surface, a percentage obtained by dividing a number of the pits by a number of the screw dislocations is 1% or less. A concentration of magnesium in the first main surface is less than 1×10atoms/cm.

Find Patent Forward Citations

Okita, Kyoko. (2024). Silicon carbide substrate and method of manufacturing silicon carbide substrate (U.S. Patent No. 11913135). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11913135

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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