The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2017

Filed:

Jul. 24, 2015
Applicant:

Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;

Inventors:

Shunsaku Ueta, Itami, JP;

Tsutomu Hori, Itami, JP;

Akira Matsushima, Itami, JP;

Assignee:

SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka-shi, Osaka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 23/06 (2006.01); C30B 29/36 (2006.01);
U.S. Cl.
CPC ...
C30B 23/066 (2013.01); C30B 29/36 (2013.01);
Abstract

A method for producing a single crystal includes a step of placing a source material powder and a seed crystal within a crucible, and a step of growing a single crystal on the seed crystal. The crucible includes a peripheral wall part and a bottom part and a lid part that are connected to the peripheral wall part to close the openings of the peripheral wall part, the lid part having a holder that holds the seed crystal. The bottom part has a connection region connected to the peripheral wall part and a thick region that is thicker than the connection region and that surrounds a central axis passing through a center of gravity of orthogonal projection of the bottom part, the orthogonal projection being formed on a plane perpendicular to a growth direction of the single crystal, the central axis extending in the growth direction of the single crystal.


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