The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2026
Filed:
Oct. 22, 2021
Applicant:
Kyoto University, Kyoto, JP;
Inventors:
Tsunenobu Kimoto, Kyoto, JP;
Keita Tachiki, Kyoto, JP;
Assignee:
KYOTO UNIVERSITY, Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/04 (2006.01); H01L 21/02 (2006.01); H10D 30/60 (2025.01); H10D 62/832 (2025.01);
U.S. Cl.
CPC ...
H01L 21/045 (2013.01); H01L 21/02164 (2013.01); H01L 21/02271 (2013.01); H10D 30/60 (2025.01); H10D 62/8325 (2025.01);
Abstract
A SiC semiconductor device manufacturing method includes a step of etching a surface of a SiC substratewith Hgas under Si-excess atmosphere within a temperature range of 1000° C. to 1350° C., a step of depositing, by a CVD method, a SiOfilmon the SiC substrateat such a temperature that the SiC substrateis not oxidized, and a step of thermally treating the SiC substrate, on which the SiOfilmis deposited, in NO gas atmosphere within a temperature range of 1150° C. to 1350° C.
Kimoto, Tsunenobu. (2026). Sic semiconductor device manufacturing method and sic mosfet (U.S. Patent No. 12563766). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12563766
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile