The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2022
Filed:
Jan. 10, 2019
Rohm Co., Ltd., Kyoto, JP;
Tsunenobu Kimoto, Kyoto, JP;
Takuma Kobayashi, Kyoto, JP;
Yuki Nakano, Kyoto, JP;
Masatoshi Aketa, Kyoto, JP;
ROHM CO., LTD., Kyoto, JP;
Abstract
A semiconductor device includes a SiC semiconductor layer that has a carbon density of 1.0×10cmor more, a SiOlayer that is formed on the SiC semiconductor layer and that has a connection surface contiguous to the SiC semiconductor layer and a non-connection surface positioned on a side opposite to the connection surface, a carbon-density-decreasing region that is formed at a surface layer portion of the connection surface of the SiOlayer and in which a carbon density gradually decreases toward the non-connection surface of the SiOlayer, and a low carbon density region that is formed at a surface layer portion of the non-connection surface of the SiOlayer and that has a carbon density of 1.0×10cmor less.