The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2023
Filed:
Nov. 26, 2021
Applicant:
Brillar Co., Ltd., Tokyo, JP;
Inventors:
Iso Ohara, Tokyo, JP;
Tsunenobu Kimoto, Kyoto, JP;
Assignee:
BRILLAR CO., LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/36 (2006.01); C30B 33/04 (2006.01);
U.S. Cl.
CPC ...
C30B 29/36 (2013.01); C30B 33/04 (2013.01);
Abstract
The method for manufacturing a crystal for a synthetic gem includes the step of preparing a SiC single crystal including an n-type impurity, and the step of irradiating the SiC single crystal with an electron beam to generate a carbon vacancy in the SiC single crystal. Irradiation energy and dose in electron beam irradiation are set such that the density of the carbon vacancy is higher than the density of the n-type impurity.