The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2025
Filed:
May. 27, 2021
Applicant:
Kyoto University, Kyoto, JP;
Inventors:
Assignee:
KYOTO UNIVERSITY, Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/832 (2025.01); H10D 12/01 (2025.01);
U.S. Cl.
CPC ...
H10D 62/8325 (2025.01); H10D 12/031 (2025.01);
Abstract
A SiC semiconductor device manufacturing method includes a step of etching a surface of a SiC substratewith Hgas at a temperature of 1200° C. or more, a step of forming a SiOfilmon the SiC substrate under conditions where the SiC substrate is not oxidized, and a step of thermally treating the SiC substrate formed with the SiOfilm in Ngas atmosphere at a temperature of 1350° C. or more.