The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2015
Filed:
Aug. 30, 2012
Katsunori Danno, Susono, JP;
Tsunenobu Kimoto, Kyoto, JP;
Katsunori Danno, Susono, JP;
Tsunenobu Kimoto, Kyoto, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Kyoto University, Kyoto, JP;
Abstract
A method of production of an SiC semiconductor device, which can form an ohmic electrode while preventing electrode metal from diffusing in the SiC single crystal substrate, includes a step of forming an ohmic electrode on an SiC substrate, characterized by forming a gettering layer with a defect density higher than the SiC substrate on that substrate to be parallel with the substrate surface, then forming the ohmic electrode the gettering layer outward from the substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile