The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2013
Filed:
Nov. 19, 2009
Hiroaki Saitoh, Mishima, JP;
Akinori Seki, Shizuoka-ken, JP;
Tsunenobu Kimoto, Kyoto, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Abstract
A p-type SiC semiconductor includes a SiC crystal that contains Al and Ti as impurities, wherein the atom number concentration of Ti is equal to or less than the atom number concentration of Al. It is preferable that the concentration of Al and the concentration of Ti satisfy the following relations: (Concentration of Al)≧5×10/cm; and 0.01%≦(Concentration of Ti)/(Concentration of Al)≦20%. It is more preferable that the concentration of Al and the concentration of Ti satisfy the following relations: (Concentration of Al)≧5×10/cm; and 1×10/cm≦(Concentration of Ti)≦1×10/cm.