The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2018
Filed:
Feb. 23, 2015
Applicant:
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Inventor:
Akinori Seki, Suntoh-gun, JP;
Assignee:
TOYOTA JIDOSHA KABUSHIKI KAISHA, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 19/12 (2006.01); C30B 33/10 (2006.01); C30B 9/06 (2006.01); C30B 29/36 (2006.01); C30B 9/10 (2006.01); C30B 33/00 (2006.01); C30B 23/02 (2006.01);
U.S. Cl.
CPC ...
C30B 33/10 (2013.01); C30B 9/06 (2013.01); C30B 9/10 (2013.01); C30B 29/36 (2013.01); C30B 33/00 (2013.01); C30B 23/02 (2013.01);
Abstract
A method for producing a SiC single crystal substrate that can remove Cr impurity from the surface of a SiC single crystal that contains Cr as an impurity, is provided. This is achieved by a method for producing a SiC single crystal substrate, wherein the method includes a step of immersing a SiC single crystal substrate containing Cr as an impurity in hydrochloric acid at 50° C. to 80° C.