The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2010
Filed:
Oct. 26, 2006
Akinori Seki, Shizuoka-ken, JP;
Yukari Tani, Nagoya, JP;
Noriyoshi Shibata, Nagoya, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Japan Fine Ceramics Center, Nagoya, JP;
Abstract
A semiconductor material having a stepwise surface structure of (0001)-plane terraces and (11-2n)-plane steps [n≧0] on the SiC substrate, a semiconductor device using the same and a method of producing the semiconductor material in which a carbon-rich surface is formed on the SiC substrate prior to epitaxial growth of an SiC crystal, the carbon-rich surface satisfies the ratio R=(I/I)>0.2, wherein I(I) is an integrated intensity of a C1s signal having a peak at the binding energy relating to stoichiometric SiC (in the region of 282.8 eV), and I(I) is an integrated intensity of a C1s signal having a peak at the binding energy relating to graphite, SiC(x>1), or SiCH(y<1) (in the region of 284.5 eV), as measured by an X-ray photoelectron spectroscopic analyzer (XPS).