The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2012
Filed:
Oct. 16, 2006
Applicants:
Akinori Seki, Shizuoka-ken, JP;
Yukari Tani, Nagoya, JP;
Noriyoshi Shibata, Nagoya, JP;
Inventors:
Assignees:
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Japan Fine Ceramics Center, Nagoya, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0312 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention provides a method of producing a silicon carbide semiconductor substrate in which a silicon carbide buffer layer doped with germanium and a semiconductor device layer are sequentially laminated on the buffer layer, a silicon carbide semiconductor substrate obtained by the method and a silicon carbide semiconductor in which electrodes are disposed on the silicon carbide semiconductor substrate.