The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
Jan. 28, 2009
Akinori Seki, Shizuoka-ken, JP;
Yasuyuki Fujiwara, Shizuoka-ken, JP;
Akinori Seki, Shizuoka-ken, JP;
Yasuyuki Fujiwara, Shizuoka-ken, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Abstract
In a method for growing a p-type SiC semiconductor single crystal on a SiC single crystal substrate, using a first solution in which C is dissolved in a melt of Si, a second solution is prepared by adding Al and N to the first solution such that an amount of Al added is larger than that of N added, and the p-type SiC semiconductor single crystal is grown on the SiC single crystal substrate from the second solution. A p-type SiC semiconductor single crystal is provided which is grown by the method as described above, and which contains 1×10cmof Al and 2×10to 7×10cmof N as impurities.