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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9903047 B1

PDFFull Text
Date of Patent:
Feb. 27, 2018

Filed:

Jun. 17, 2016

Production method of sic crystal

Applicants:

Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;

Japan Fine Ceramics Center, Nagoya-shi, Aichi-ken, JP;

Inventors:

Akinori Seki, Shizuoka-ken, JP;

Yukari Ishikawa, Nagoya, JP;

Assignees:

TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;

JAPAN FINE CERAMICS CENTER, Nagoya-shi, JP;

Attorney:

Oliff PLC

Primary Examiner:

Robert M Kunemund

Int. Cl.
CPC ...
C30B 25/18 (2006.01); C30B 23/02 (2006.01); C30B 29/36 (2006.01); C23C 14/18 (2006.01); C23C 14/34 (2006.01); C23C 14/48 (2006.01); C23C 16/32 (2006.01);
U.S. Cl.
CPC ...
C30B 25/186 (2013.01); C23C 14/18 (2013.01); C23C 14/185 (2013.01); C23C 14/34 (2013.01); C23C 14/48 (2013.01); C23C 16/325 (2013.01); C30B 23/025 (2013.01); C30B 29/36 (2013.01);
Abstract

A method for producing an SiC crystal, comprising supplying a raw material gas containing Si, C and N to vapor-grow an N-doped SiC crystal on an SiC substrate, wherein the SiC substrate is an SiC substrate on which La, Ce or Ti is deposited in part or whole of the surface or an SiC substrate in which La, Ce or Ti ion is implanted into part or whole of the surface.

Find Patent Forward Citations

Seki, Akinori. (2018). Production method of sic crystal (U.S. Patent No. 9903047). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9903047

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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