Nagoya, Japan

Yukari Ishikawa


Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2018

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1 patent (USPTO):Explore Patents

Title: **The Innovative Mind of Yukari Ishikawa: Advancements in SiC Crystal Production**

Introduction

Yukari Ishikawa, an accomplished inventor based in Nagoya, Japan, has made significant contributions in the realm of semiconductor technology. With a focus on the production of silicon carbide (SiC) crystals, Ishikawa's innovative methods hold promising implications for various applications in electronics and materials science.

Latest Patents

Ishikawa holds a single patent titled "Production Method of SiC Crystal." This patent outlines a novel approach for producing an N-doped SiC crystal by supplying a raw material gas containing silicon (Si), carbon (C), and nitrogen (N) to vapor-grow the crystal on an SiC substrate. Notably, this substrate can either be partially or wholly coated with lanthanum (La), cerium (Ce), or titanium (Ti), or be modified through ion implantation of these elements. This advancement contributes to improved properties of SiC crystals, making them more efficient for electronic components.

Career Highlights

Throughout her career, Yukari Ishikawa has worked with notable organizations, including Toyota Motor Corporation and the Japan Fine Ceramics Center. At Toyota, she contributed to enhancing the technological capabilities of automotive components. Her role at the Japan Fine Ceramics Center further enabled her to dive into research and development, solidifying her expertise in ceramics and semiconductor materials.

Collaborations

Ishikawa has collaborated closely with her coworker, Akinori Seki, to push the boundaries of materials science. Their partnership has led to innovative research initiatives that explore the intersections of chemistry and engineering, especially in developing advanced materials for various applications.

Conclusion

Yukari Ishikawa stands out as a pioneering inventor who continues to influence the field of semiconductor manufacturing through her innovative approach to SiC crystal production. Her patent not only showcases her expertise but also reflects her commitment to advancing technology for the betterment of industry. As her career progresses, Ishikawa will undoubtedly remain a prominent figure in the world of innovations and inventions.

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