The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2014
Filed:
Sep. 02, 2010
Masahiro Sugimoto, Toyota, JP;
Akinori Seki, Shizuoka-ken, JP;
Akira Kawahashi, Komaki, JP;
Yasuo Takahashi, Suita, JP;
Masakatsu Maeda, Suita, JP;
Masahiro Sugimoto, Toyota, JP;
Akinori Seki, Shizuoka-ken, JP;
Akira Kawahashi, Komaki, JP;
Yasuo Takahashi, Suita, JP;
Masakatsu Maeda, Suita, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-Shi, JP;
Abstract
A manufacturing method of a semiconductor device including an electrode having low contact resistivity to a nitride semiconductor is provided. The manufacturing method includes a carbon containing layer forming step of forming a carbon containing layer containing carbon on a nitride semiconductor layer, and a titanium containing layer forming step of forming a titanium containing layer containing titanium on the carbon containing layer. A complete solid solution Ti (C, N) layer of TiN and TiC is formed between the titanium containing layer and the nitride semiconductor layer. As a result, the titanium containing layer comes to be in ohmic contact with the nitride semiconductor layer throughout the border therebetween.