The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2017
Filed:
Jul. 17, 2009
Katsunori Danno, Susono, JP;
Akinori Seki, Shizuoka, JP;
Hiroaki Saitoh, Mishima, JP;
Yoichiro Kawai, Okazaki, JP;
Katsunori Danno, Susono, JP;
Akinori Seki, Shizuoka, JP;
Hiroaki Saitoh, Mishima, JP;
Yoichiro Kawai, Okazaki, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi, JP;
Abstract
A method of production of a SiC single crystal uses the solution method to prevent the formation of defects due to seed touch, i.e., causing a seed crystal to touch the melt, and thereby cause growth of a SiC single crystal reduced in defect density. According to the method, a SiC seed crystal touches a melt containing Si in a graphite crucible to thereby cause growth of the SiC single crystal on the SiC seed crystal. The method includes making the SiC seed crystal touch the melt, and then making the melt rise in temperature once to a temperature higher than the temperature at the time of touch and also higher than the temperature for causing growth.