The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2022
Filed:
Jan. 11, 2019
National Institute of Advanced Industrial Science and Technology, Tokyo, JP;
Shinya Ohmagari, Ikeda, JP;
Hideaki Yamada, Ikeda, JP;
Hitoshi Umezawa, Ikeda, JP;
Nobuteru Tsubouchi, Ikeda, JP;
Akiyoshi Chayahara, Ikeda, JP;
Yoshiaki Mokuno, Ikeda, JP;
Akinori Seki, Toyota, JP;
Fumiaki Kawai, Toyota, JP;
Hiroaki Saitoh, Toyota, JP;
Abstract
A stack including at least a semiconductor drift layer stacked on a single-crystal diamond substrate having a coalescence boundary, wherein the coalescence boundary of the single-crystal diamond substrate is a region that exhibits, in a Raman spectrum at a laser excitation wavelength of 785 nm, a full width at half maximum of a peak near 1332 cmdue to diamond that is observed to be broader than a full width at half maximum of the peak exhibited by a region different from the coalescence boundary, the coalescence boundary has a width of 200 μm or more, and the semiconductor drift layer is stacked on at least the coalescence boundary.