Ikeda, Japan

Akiyoshi Chayahara

This inventor holds 14 USPTO granted patents and 4 published patent applications and 2 EPO patents. Top assignees: National Institute of Advanced Industrial Science and Technology, Agency of Industrial Science and Technology, Agency of Industrial Science and Technology Ministry of International. Active years: 1997-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Akiyoshi Chayahara. Retrieved from https://idiyas.com/inventor/akiyoshi-chayahara

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 14 

% Patents Active = 92.9

 

Average Co-Inventor Count = 3.5

ph-index = 4

Forward Citations = 37(Granted Patents)


Location History:

  • Osaka, JP (2003 - 2010)
  • Ikeda, JP (1997 - 2022)

Company Filing History:


Years Active: 1997-2025

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14 patents (USPTO):Explore Patents

Title: Akiyoshi Chayahara: Innovator in Microwave Plasma Technology

Introduction

Akiyoshi Chayahara is a prominent inventor based in Ikeda, Japan. He has made significant contributions to the field of microwave plasma technology, holding a total of 14 patents. His innovative work has advanced the understanding and application of microwave plasma treatment devices.

Latest Patents

One of Chayahara's latest patents is a microwave plasma treatment device. This device includes a resonator with a container, a single microwave oscillation source that outputs a reference microwave, and a waveguide connecting the two. It features a phase control mechanism that generates a modified microwave with a different phase from the reference microwave. The resonator is designed to introduce both the reference and modified microwaves, allowing for the manipulation of the plasma ball's position, size, and shape within the container.

Another notable patent is a stack comprising a single-crystal diamond substrate. This stack includes a semiconductor drift layer stacked on a single-crystal diamond substrate that has a coalescence boundary. The coalescence boundary is characterized by a broader Raman spectrum peak, indicating its unique properties. The semiconductor drift layer is specifically stacked on the coalescence boundary, enhancing the material's functionality.

Career Highlights

Chayahara has worked with esteemed organizations such as the National Institute of Advanced Industrial Science and Technology and the Agency of Industrial Science and Technology, Ministry of International Trade and Industry. His work in these institutions has allowed him to push the boundaries of innovation in his field.

Collaborations

Throughout his career, Chayahara has collaborated with notable colleagues, including Yoshiaki Mokuno and Hideaki Yamada. These partnerships have contributed to the advancement of his research and the successful development of his inventions.

Conclusion

Akiyoshi Chayahara's contributions to microwave plasma technology and his impressive portfolio of patents highlight his role as a leading inventor in this field. His innovative devices and collaborative efforts continue to influence advancements in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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