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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11355591 B1

PDFFull Text
Date of Patent:
Jun. 07, 2022

Filed:

Sep. 19, 2018

Single crystal diamond and semiconductor element using same

Applicant:

National Institute of Advanced Industrial Science and Technology, Tokyo, JP;

Inventors:

Shinya Ohmagari, Ikeda, JP;

Hideaki Yamada, Ikeda, JP;

Akiyoshi Chayahara, Ikeda, JP;

Yoshiaki Mokuno, Ikeda, JP;

Assignee:

NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, Tokyo, JP;

Attorney:

Knobbe, Martens, Olson & Bear, LLP

Primary Examiner:

Xiaoming Liu

Int. Cl.
CPC ...
C23C 16/27 (2006.01); C30B 25/02 (2006.01); C30B 29/04 (2006.01); H01L 29/16 (2006.01); H01L 21/02 (2006.01); H01L 29/34 (2006.01); H01L 29/66 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1602 (2013.01); C23C 16/271 (2013.01); C23C 16/274 (2013.01); C30B 25/02 (2013.01); C30B 29/04 (2013.01); H01L 21/0262 (2013.01); H01L 21/02376 (2013.01); H01L 21/02527 (2013.01); H01L 29/34 (2013.01); H01L 29/6603 (2013.01); H01L 29/872 (2013.01);
Abstract

Provided is a single crystal diamond having a lowered dislocation density. The single crystal diamond () is provided with single crystal diamond layers (). One single crystal diamond layer () is formed on a diamond substrate () and contains point defects. The other single crystal diamond layer () is grown on the single crystal diamond layer (). The single crystal diamond layers () have a lower dislocation density than the diamond substrate.

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Ohmagari, Shinya. (2022). Single crystal diamond and semiconductor element using same (U.S. Patent No. 11355591). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11355591

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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