The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 2016

Filed:

Aug. 31, 2007
Applicants:

Yoshiaki Mokuno, Ikeda, JP;

Akiyoshi Chayahara, Ikeda, JP;

Hideaki Yamada, Ikeda, JP;

Inventors:

Yoshiaki Mokuno, Ikeda, JP;

Akiyoshi Chayahara, Ikeda, JP;

Hideaki Yamada, Ikeda, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/01 (2006.01); C23C 16/27 (2006.01); C23C 16/56 (2006.01); C25F 3/00 (2006.01); C30B 29/04 (2006.01); C30B 31/22 (2006.01); C30B 33/06 (2006.01);
U.S. Cl.
CPC ...
C23C 16/01 (2013.01); C23C 16/27 (2013.01); C23C 16/56 (2013.01); C25F 3/00 (2013.01); C30B 29/04 (2013.01); C30B 31/22 (2013.01); C30B 33/06 (2013.01);
Abstract

The present invention provides a method for separating a surface layer of a diamond, which comprises implanting ions into a diamond to form a non-diamond layer near a surface of the diamond; and etching the non-diamond layer in the diamond by applying an alternating-current voltage across electrodes in an electrolytic solution; and a method for separating a grown layer of a diamond, which further comprises the step of growing a diamond by a vapor-phase synthesis method, after forming a non-diamond layer according to the above-described method. The invention is applicable to various single-crystal and polycrystal diamonds. More specifically, even with a large single-crystal diamond, a portion of the single-crystal diamond can be efficiently separated in a reusable form in a relatively short period of time.


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