The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2011
Filed:
Mar. 13, 2008
Yasuo Takahashi, Suita, JP;
Masakatsu Maeda, Suita, JP;
Akinori Seki, Shizuoka, JP;
Akira Kawahashi, Kasugai, JP;
Masahiro Sugimoto, Toyota, JP;
Yasuo Takahashi, Suita, JP;
Masakatsu Maeda, Suita, JP;
Akinori Seki, Shizuoka, JP;
Akira Kawahashi, Kasugai, JP;
Masahiro Sugimoto, Toyota, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-Shi, Aichi, JP;
Osaka University, Suita-Shi, Osaka, JP;
Abstract
A method of forming an Ohmic contact on a P-type 4H—SiC and an Ohmic contact formed by the same are provided. A method of forming an Ohmic contact on a P-type 4H—SiC substrate including a deposition step of successively depositing a 1 to 60 nm thick first Al layer, Ti layer, and second Al layer on a P-type 4H—SiC substrate and an alloying step of forming an alloy layer between the SiC substrate and the Ti layer through the first Al layer by heat treatment in a nonoxidizing atmosphere. An Ohmic contact on a P-type 4H—SiC substrate formed by this method is also provided.