The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
Feb. 18, 2010
Applicants:
Akinori Seki, Shizuoka-ken, JP;
Yasuyuki Fujiwara, Shizuoka-ken, JP;
Inventors:
Akinori Seki, Shizuoka-ken, JP;
Yasuyuki Fujiwara, Shizuoka-ken, JP;
Assignee:
TOYOTA JIDOSHA KABUSHIKI KAISHA, Aichi-ken, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 15/04 (2006.01); C30B 29/36 (2006.01); C30B 15/02 (2006.01); H01L 29/167 (2006.01); C30B 15/00 (2006.01); C30B 19/00 (2006.01); H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 29/872 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
C30B 29/36 (2013.01); C30B 15/00 (2013.01); C30B 15/02 (2013.01); C30B 15/04 (2013.01); C30B 19/00 (2013.01); H01L 21/02529 (2013.01); H01L 21/02576 (2013.01); H01L 21/02631 (2013.01); H01L 21/02639 (2013.01); H01L 29/167 (2013.01); H01L 29/7802 (2013.01); H01L 29/872 (2013.01); H01L 29/1608 (2013.01);
Abstract
A method for producing n-type SiC single crystal, including: adding gallium and nitrogen, which is a donor element, for obtaining an n-type semiconductor during crystal growth of SiC single crystal, such that the amount of nitrogen as represented in atm unit is greater than the amount of gallium as represented in atm unit; an n-type SiC single crystal obtained according to this production method; and, a semiconductor device that includes the n-type SiC single crystal.