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Sunnyvale, CA, United States of America

Fasl LLC

USPTO Granted Patents = 30

Forward Citations = 600

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53 inventors (with patents filed for the assignee):

Hidehiko Shiraiwa (15 out of 73 patents)

Arvind Halliyal (10 out of 82 patents)

Tazrien Kamal (9 out of 41 patents)

4. Mark T Ramsbey (8 out of 162 patents)

5. Jaeyong Park (7 out of 23 patents)

6. Jean Y Yang (6 out of 49 patents)

7. Rinji Sugino (5 out of 30 patents)

8. Amir Hossein Jafarpour (4 out of 6 patents)

9. Pau-Ling Chen (4 out of 70 patents)

10. Darlene G Hamilton (4 out of 66 patents)

11. Minh Van Ngo (3 out of 292 patents)

12. Inkuk Kang (3 out of 22 patents)

13. Kazuhiro Kurihara (3 out of 73 patents)

14. Yu Nan Sun (3 out of 109 patents)

15. Hiroyuki Ogawa (2 out of 171 patents)

30 patents: Sort by Forward Citations

1. 7394125 - Recessed channel with separated ONO memory device (2008-07-01),

2. 7122853 - Method to improve yield and simplify operation of polymer memory cells (2006-10-17),

3. 7098546 - Alignment marks with salicided spacers between bitlines for alignment signal improvement (2006-08-29),

4. 7074677 - Memory with improved charge-trapping dielectric layer (2006-07-11),

5. 7067377 - Recessed channel with separated ONO memory device (2006-06-27),

6. 7037780 - Semiconductor memory device and method of fabricating the same (2006-05-02),

7. 7033957 - ONO fabrication process for increasing oxygen content at bottom oxide-substrate interface in flash memory devices (2006-04-25),

8. 7019366 - Electrostatic discharge performance of a silicon structure and efficient use of area with electrostatic discharge protective device under the pad approach and adjustment of via configuration thereto to control drain junction resistance (2006-03-28),

9. 7009887 - Method of determining voltage compensation for flash memory devices (2006-03-07),

10. 6984563 - Floating gate semiconductor component and method of manufacture (2006-01-10),

11. 6979577 - Method and apparatus for manufacturing semiconductor device (2005-12-27),

12. 6977195 - Test structure for characterizing junction leakage current (2005-12-20),

13. 6969886 - ONO fabrication process for reducing oxygen vacancy content in bottom oxide layer in flash memory devices (2005-11-29),

14. 6958511 - Flash memory device and method of fabrication thereof including a bottom oxide layer with two regions with different concentrations of nitrogen (2005-10-25),

15. 6955965 - Process for fabrication of nitride layer with reduced hydrogen content in ONO structure in semiconductor device (2005-10-18),

FASL LLC is a multinational clothing company specializing in sportswear and athletic footwear. Established in 1995, FASL has quickly grown to become one of the leading brands in the industry. With a commitment to innovation and quality, FASL offers a wide range of products for athletes and fitness enthusiasts. Whether it's running shoes, workout apparel, or accessories, FASL provides high-performance gear designed to enhance athletic performance and style. Visit our website to explore our latest collections and find the perfect sportswear for your active lifestyle.

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Company Badge

USPTO Data Jan 1 1976 - Dec 9 2025

30 Patents

#115 in Sunnyvale, CA

#2,586 in California

#10,859 in US

#21,181 in the World

Sunnyvale, CA, United States of America

Fasl LLC

Forward Citations = 600

53 inventors:

Hidehiko Shiraiwa (15 out of 73 patents)

Arvind Halliyal (10 out of 82 patents)

Tazrien Kamal (9 out of 41 patents)

4. Mark T Ramsbey (8 out of 162 patents)

5. Jaeyong Park (7 out of 23 patents)

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