The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2006
Filed:
Nov. 18, 2003
Applicants:
Hideo Takagi, Aizuwakamatsu, JP;
Takayuki Enda, Aizuwakamatsu, JP;
Miyuki Umetsu, Aizuwakamatsu, JP;
Tsukasa Takamatsu, Aizuwakamatsu, JP;
Inventors:
Hideo Takagi, Aizuwakamatsu, JP;
Takayuki Enda, Aizuwakamatsu, JP;
Miyuki Umetsu, Aizuwakamatsu, JP;
Tsukasa Takamatsu, Aizuwakamatsu, JP;
Assignee:
FASL LLC, Sunnyvale, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A silicon nitride film for storing electric charge is formed on a semiconductor substrate while placing a tunnel oxide film in between, and the silicon nitride film is then subjected to hydrogen plasma treatment so as to effectively erase unnecessary charge stored therein during various process steps in fabrication of the semiconductor memory device, to thereby stabilize the threshold voltage (V) of the semiconductor memory device.