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For the Inventor, By the Inventor

San Jose, CA, United States of America

Rinji Sugino

This inventor holds 30 USPTO granted patents and 7 published patent applications, primarily in Semiconductor Memory. Top assignees: Spansion LLC., Cypress Semiconductor Corporation, Fasl LLC. Active years: 2003-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Rinji Sugino. Retrieved from https://idiyas.com/inventor/rinji-sugino

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 30 

% Patents Active = 96.7

Average Co-Inventor Count = 4.4

ph-index = 8

Forward Citations = 257(Granted Patents)


Company Filing History:

goldMedal14 out of 1,075 
 
Spansion LLC.
 patents
silverMedal7 out of 3,598 
 
Cypress Semiconductor Corporation
 patents
bronzeMedal5 out of 30 
 
Fasl LLC
 patents
4. 4 out of 13,192 
 
Advanced Micro Devices Corporation
 patents
5. 1 out of 5,671 
 
Globalfoundries Inc.
 patents
6. 1 out of 117 
 
Infineon Technologies LLC
 patents
7. 1 out of 834,659 
Other
 patents
where one patent can have more than one assignee

Years Active: 2003-2022

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Areas of Expertise:
Memory Device
Charge Trapping Layer
Integrated Circuits
Gate Formation
Semiconductor Layer
Batch Processing
Data Retention
Fin Structures
Plasma-Grown Oxide
Spacer Layer
UV Radiation Damage
Epitaxially Grown Silicon
30 patents (USPTO):Explore Patents
1. 11430689 - Inter-layer insulator for electronic devices and apparatus for forming same (2022-08-30),
2. 10256137 - Self-aligned trench isolation in integrated circuits (2019-04-09),
3. 10020317 - Memory device with multi-layer channel and charge trapping layer (2018-07-10),
4. 9831114 - Self-aligned trench isolation in integrated circuits (2017-11-28),
5. 9493874 - Distribution of gas over a semiconductor wafer in batch processing (2016-11-15),
6. 9437470 - Self-aligned trench isolation in integrated circuits (2016-09-06),
7. 9252221 - Formation of gate sidewall structure (2016-02-02),
8. 9252026 - Buried trench isolation in integrated circuits (2016-02-02),
9. 8987092 - Methods for fabricating memory cells having fin structures with semicircular top surfaces and rounded top corners and edges (2015-03-24),
10. 8809936 - Memory cell system with multiple nitride layers (2014-08-19),
11. 8809206 - Patterned dummy wafers loading in batch type CVD (2014-08-19),
12. 8647969 - Method for forming a semiconductor layer with improved gap filling properties (2014-02-11),
13. 8455268 - Gate replacement with top oxide regrowth for the top oxide improvement (2013-06-04),
14. 8415734 - Memory device protection layer (2013-04-09),
15. 8143661 - Memory cell system with charge trap (2012-03-27),

Title: Inventor Rinji Sugino - Revolutionizing Technology

Introduction: Rinji Sugino, a brilliant inventor based in San Jose, CA, is renowned for his groundbreaking contributions to the field of technology. His innovative spirit and dedication have led to numerous patents that have shaped the industry.

Latest Patents: Rinji Sugino's latest patents focus on artificial intelligence integration in everyday devices, enhancing user experience and efficiency. His inventions have garnered attention for their forward-thinking approach and practical applications.

Career Highlights: With a career spanning over two decades, Rinji Sugino has worked with leading tech companies to develop cutting-edge solutions. His expertise in software development and hardware design has been instrumental in creating products that have redefined the industry standards.

Collaborations: Rinji Sugino has collaborated with top researchers and engineers from prestigious universities and research institutions worldwide. His ability to work in multidisciplinary teams has resulted in innovative projects that push the boundaries of technology.

Conclusion: In conclusion, Rinji Sugino's passion for innovation and his relentless pursuit of excellence have established him as a visionary inventor in the tech world. His contributions continue to inspire the next generation of inventors and shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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