The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2016
Filed:
Dec. 30, 2013
Spansion Llc, Sunnyvale, CA (US);
Rinji Sugino, San Jose, CA (US);
Scott Bell, San Jose, CA (US);
Chun Chen, San Jose, CA (US);
Shenging Fang, Fremont, CA (US);
Cypress Semiconductor Corporation, San Jose, CA (US);
Abstract
A semiconductor device having a gate stack on a substrate is disclosed. The gate stack may include a mask layer disposed over a first gate conductor layer. The first gate conductor layer may be laterally etched beneath the mask layer to create an overhanging portion of the mask layer. A sidewall dielectric can be formed on the sidewall of the first gate conductor layer beneath the overhanging portion of the mask layer. A sidewall structure layer can be formed adjacent to the sidewall dielectric and beneath the overhanging portion of the mask layer. The mask layer can be removed. The first gate conductor layer can be used to form a memory gate and the sidewall structure layer can be used to form a select gate.