Shenging Fang

Title: Shenging Fang: Innovator in Semiconductor Technology

Introduction

Shenging Fang is a notable inventor based in Fremont, CA (US), recognized for his contributions to semiconductor technology. With a total of 2 patents, he has made significant advancements in the field, particularly in memory devices and gate structures.

Latest Patents

Fang's latest patents include the "Formation of gate sidewall structure," which describes a semiconductor device featuring a gate stack on a substrate. This innovation involves a mask layer over a first gate conductor layer, which is laterally etched to create an overhanging portion. A sidewall dielectric is formed on the sidewall of the first gate conductor layer, and a sidewall structure layer is created adjacent to it. The first gate conductor layer is utilized to form a memory gate, while the sidewall structure layer is used for a select gate. Another significant patent is the "Self-aligned patterning method by using non-conformal film and etch back for flash memory and other semiconductor applications." This method fabricates a memory device with a self-aligned trap layer optimized for scaling, involving the deposition of a non-conformal oxide and various etching processes to isolate the trap layer.

Career Highlights

Throughout his career, Shenging Fang has worked with prominent companies in the semiconductor industry, including Cypress Semiconductor Corporation and Spansion LLC. His work has contributed to the development of advanced memory technologies and semiconductor devices.

Collaborations

Fang has collaborated with notable professionals in the field, including Rinji Sugino and Scott Allan Bell. These collaborations have further enhanced his contributions to semiconductor innovations.

Conclusion

Shenging Fang's work in semiconductor technology showcases his innovative spirit and dedication to advancing the field. His patents reflect significant advancements that continue to influence the industry.