The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2022
Filed:
Oct. 09, 2018
Applicant:
Cypress Semiconductor Corporation, San Jose, CA (US);
Inventors:
Rinji Sugino, San Jose, CA (US);
Fei Wang, San Jose, CA (US);
Assignee:
Infineon Technologies LLC, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/764 (2006.01);
U.S. Cl.
CPC ...
H01L 21/764 (2013.01);
Abstract
A semiconducting device utilizing air-gaps for inter-layer insulation and methods of producing the device are described. The device may be produced by forming a sacrificial layer between two structures. A porous membrane layer is then formed over the sacrificial layer. The membrane layer is porous to an etch product, which allows for the subsequent etching of the sacrificial layer leaving an air gap between the device structures and the membrane intact. The device may also include a cap layer formed above the device structures and the membrane.