The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2013
Filed:
Aug. 31, 2007
Chungho Lee, Sunnyvale, CA (US);
Hiroyuki Kinoshita, San Jose, CA (US);
Kuo-tung Chang, Saratoga, CA (US);
Rinji Sugino, San Jose, CA (US);
Chi Chang, Saratoga, CA (US);
Huaqiang Wu, Mountain View, CA (US);
Chungho Lee, Sunnyvale, CA (US);
Hiroyuki Kinoshita, San Jose, CA (US);
Kuo-Tung Chang, Saratoga, CA (US);
Rinji Sugino, San Jose, CA (US);
Chi Chang, Saratoga, CA (US);
Huaqiang Wu, Mountain View, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
Methods of replacing/reforming a top oxide around a charge storage element of a memory cell and methods of improving quality of a top oxide around a charge storage element of a memory cell are provided. The method can involve removing a first poly over a first top oxide from the memory cell; removing the first top oxide from the memory cell; and forming a second top oxide around the charge storage element. The second top oxide can be formed by oxidizing a portion of the charge storage element or by forming a sacrificial layer over the charge storage element and oxidizing the sacrificial layer to a second top oxide.