The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2015

Filed:

Apr. 28, 2008
Applicants:

Inkuk Kang, San Jose, CA (US);

Gang Xue, Sunnyvale, CA (US);

Shenqing Fang, Fremont, CA (US);

Rinji Sugino, San Jose, CA (US);

Yi MA, Santa Clara, CA (US);

Inventors:

Inkuk Kang, San Jose, CA (US);

Gang Xue, Sunnyvale, CA (US);

Shenqing Fang, Fremont, CA (US);

Rinji Sugino, San Jose, CA (US);

Yi Ma, Santa Clara, CA (US);

Assignee:

Spansion LLC, Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 27/115 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11568 (2013.01); H01L 29/66795 (2013.01); H01L 29/7854 (2013.01);
Abstract

Methods for fabricating a FIN structure with a semicircular top surface and rounded top surface corners and edges are disclosed. As a part of a disclosed method, a FIN structure is formed in a semiconductor substrate. The FIN structure includes a top surface having corners and edges. The FIN structure is annealed where the annealing causes the top surface to have a semicircular shape and the top surface corners and edges to be rounded.


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