Gang Xue

USPTO Granted Patents = 9 (Patent Applications = 1)

Average Co-Inventor Count = 4.5

ph-index = 2

Forward Citations = 6(Granted Patents)

Company Filing History:

Years Active: 2011-2015

Loading Chart...

9 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 8987092 - Methods for fabricating memory cells having fin structures with semicircular top surfaces and rounded top corners and edges (2015-03-24),

2. 8790530 - Planar cell ONO cut using in-situ polymer deposition and etch (2014-07-29),

3. 8742496 - Sonos memory cells having non-uniform tunnel oxide and methods for fabricating same (2014-06-03),

4. 8637918 - Method and device employing polysilicon scaling (2014-01-28),

5. 8551858 - Self-aligned SI rich nitride charge trap layer isolation for charge trap flash memory (2013-10-08),

6. 8487373 - SONOS memory cells having non-uniform tunnel oxide and methods for fabricating same (2013-07-16),

7. 8384146 - Methods for forming a memory cell having a top oxide spacer (2013-02-26),

8. 8202779 - Methods for forming a memory cell having a top oxide spacer (2012-06-19),

9. 8076199 - Method and device employing polysilicon scaling (2011-12-13),

Title: Gang Xue: Innovator in Semiconductor Technology

Introduction

Gang Xue is a prominent inventor based in Sunnyvale, California, known for his significant contributions to semiconductor technology. With a total of nine patents to his name, he has made remarkable advancements in the fabrication of memory cells and charge storage layers.

Latest Patents

Among his latest patents, Gang Xue has developed methods for fabricating memory cells that feature fin structures with semicircular top surfaces and rounded corners. This innovative approach involves forming a FIN structure in a semiconductor substrate, which is then annealed to achieve a semicircular shape on the top surface. Additionally, he has patented a method for planar cell ONO cut using in-situ polymer deposition and etch. This method provides a technique for charge storage layer separation, where a polymer layer is deposited on an ONO layer, allowing for selective etching to expose specific regions.

Career Highlights

Throughout his career, Gang Xue has worked with notable companies such as Spansion LLC and Spanion LLC. His work in these organizations has contributed to the advancement of semiconductor technologies and memory cell fabrication.

Collaborations

Gang Xue has collaborated with talented individuals in the field, including Shenqing Fang and Inkuk Kang. These collaborations have further enhanced his innovative work and contributions to semiconductor technology.

Conclusion

Gang Xue's expertise and innovative patents have significantly impacted the semiconductor industry. His work continues to pave the way for advancements in memory cell technology and fabrication methods.

This text is generated by artificial intelligence and may not be accurate.

Please report any incorrect information to support@idiyas.com

1 patent pending:

Please report any incorrect information to support@idiyas.com

Inventor’s Patent Attorneys refers to legal professionals with specialized expertise in representing inventors throughout the patent process. These attorneys assist inventors in navigating the complexities of patent law, including filing patent applications, conducting patent searches, and protecting intellectual property rights. They play a crucial role in helping inventors secure patents for their innovative creations.