The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2013
Filed:
Apr. 29, 2009
Shenqing Fang, Fremont, CA (US);
Gang Xue, Sunnyvale, CA (US);
Wenmei LI, San Jose, CA (US);
Inkuk Kang, San Jose, CA (US);
Shenqing Fang, Fremont, CA (US);
Gang Xue, Sunnyvale, CA (US);
Wenmei Li, San Jose, CA (US);
Inkuk Kang, San Jose, CA (US);
Spanion LLC, Sunnyvale, CA (US);
Abstract
Methods for forming a memory cell are disclosed. A method includes forming a source-drain structure in a semiconductor substrate where the source-drain structure includes a rounded top surface and sidewall surfaces. An oxide layer is formed on the top and sidewall surfaces of the source-drain structure. The thickness of the portion of the oxide layer that is formed on the top surface of the source-drain structure is greater than the thickness of the portion of the oxide layer that is formed on the sidewall surfaces of the source-drain structure.