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For the Inventor, By the Inventor

San Jose, CA, United States of America

Inkuk Kang

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This inventor holds 22 USPTO granted patents and 5 published patent applications, primarily in Flash Memory Technology. Top assignees: Spansion LLC., Cypress Semiconductor Corporation, Advanced Micro Devices Corporation. Active years: 2004-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Inkuk Kang. Retrieved from https://idiyas.com/inventor/inkuk-kang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 22 

% Patents Active = 95.5

Average Co-Inventor Count = 5.3

ph-index = 6

Forward Citations = 145(Granted Patents)


Location History:

  • Saratoga, CA (US) (2004 - 2006)
  • Sunnyvale, CA (US) (2013)
  • San Jose, CA (US) (2005 - 2024)

Company Filing History:

goldMedal10 out of 1,075 
 
Spansion LLC.
 patents
silverMedal5 out of 3,598 
 
Cypress Semiconductor Corporation
 patents
bronzeMedal4 out of 13,192 
 
Advanced Micro Devices Corporation
 patents
4. 3 out of 30 
 
Fasl LLC
 patents
5. 1 out of 117 
 
Infineon Technologies LLC
 patents
where one patent can have more than one assignee

Years Active: 2004-2024

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Areas of Expertise:
High-Voltage Transistor
Flash Memory
SONOS Cells
Non-Volatile Memory
Polysilicon Scaling
Cu Annealing
Memory Fabrication
Charge Trap Layer
Tunnel Oxide
Interconnect Thickness
Recessed Channel
UV Radiation Protection
22 patents (USPTO):Explore Patents
1. 12029041 - Method of forming high-voltage transistor with thin gate poly (2024-07-02),
2. 11690227 - Method of forming high-voltage transistor with thin gate poly (2023-06-27),
3. 10872898 - Embedded non-volatile memory device and fabrication method of the same (2020-12-22),
4. 10497710 - Split-gate flash cell formed on recessed substrate (2019-12-03),
5. 10242996 - Method of forming high-voltage transistor with thin gate poly (2019-03-26),
6. 9853039 - Split-gate flash cell formed on recessed substrate (2017-12-26),
7. 8987092 - Methods for fabricating memory cells having fin structures with semicircular top surfaces and rounded top corners and edges (2015-03-24),
8. 8742496 - Sonos memory cells having non-uniform tunnel oxide and methods for fabricating same (2014-06-03),
9. 8637918 - Method and device employing polysilicon scaling (2014-01-28),
10. 8551858 - Self-aligned SI rich nitride charge trap layer isolation for charge trap flash memory (2013-10-08),
11. 8487373 - SONOS memory cells having non-uniform tunnel oxide and methods for fabricating same (2013-07-16),
12. 8076199 - Method and device employing polysilicon scaling (2011-12-13),
13. 8026169 - Cu annealing for improved data retention in flash memory devices (2011-09-27),
14. 7288487 - Metal/oxide etch after polish to prevent bridging between adjacent features of a semiconductor structure (2007-10-30),
15. 7242102 - Bond pad structure for copper metallization having increased reliability and method for fabricating same (2007-07-10),

Title: The Innovative Journey of Inventor Inkuk Kang

Introduction: Inkuk Kang is a visionary inventor based in San Jose, California, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Inkuk Kang holds several patents in the areas of artificial intelligence, robotics, and renewable energy technologies, showcasing his commitment to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Inkuk Kang has worked with leading tech companies, research institutions, and universities to develop cutting-edge solutions that have revolutionized various industries.

Collaborations: Throughout his career, Inkuk Kang has collaborated with top engineers, scientists, and researchers to bring his innovative ideas to life, fostering a culture of creativity and collaboration in the tech community.

Conclusion: Inkuk Kang's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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