The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2011
Filed:
Nov. 06, 2006
LU You, San Jose, CA (US);
Alexander Nickel, Santa Clara, CA (US);
Minh Q. Tran, Milpitas, CA (US);
Minh-van Ngo, Fremont, CA (US);
Hieu Pham, Milpitas, CA (US);
Erik Wilson, Santa Clara, CA (US);
Hirokazu Tokuno, Cupertino, CA (US);
Amir Hossein Jafarpour, Pleasanton, CA (US);
Inkuk Kang, San Jose, CA (US);
Robert Huertas, Hollister, CA (US);
Lu You, San Jose, CA (US);
Alexander Nickel, Santa Clara, CA (US);
Minh Q. Tran, Milpitas, CA (US);
Minh-Van Ngo, Fremont, CA (US);
Hieu Pham, Milpitas, CA (US);
Erik Wilson, Santa Clara, CA (US);
Hirokazu Tokuno, Cupertino, CA (US);
Amir Hossein Jafarpour, Pleasanton, CA (US);
Inkuk Kang, San Jose, CA (US);
Robert Huertas, Hollister, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
Data retention in flash memory devices, such as mirrorbit devices, is improved by reducing the generation and/or diffusion of hydrogen ions during back end processing, such as annealing inlaid Cu. Embodiments include annealing inlaid Cu in an Natmosphere containing low Hor no H, and at temperatures less than 200° C., e.g., 100° C. to 150° C.