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Robert A Huertas

USPTO Granted Patents = 32 (Patent Applications = 2)

Average Co-Inventor Count = 4.3

ph-index = 10

Forward Citations = 344(Granted Patents)

Company Filing History:

28 out of 12,883

Advanced Micro Devices Corporation

Advanced Micro Devices, Inc. and Spansion LLC

patent

5. 1 out of 832,843

Other

patents

where one patent can have more than one assignee

Years Active: 1999-2015

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32 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9018037 - Vertical oxide-oxide interface for forming-free, low power and low variability RRAM devices (2015-04-28),

2. 8791445 - Interfacial oxide used as switching layer in a nonvolatile resistive memory element (2014-07-29),

3. 8415256 - Gap-filling with uniform properties (2013-04-09),

4. 8026169 - Cu annealing for improved data retention in flash memory devices (2011-09-27),

5. 7884030 - Gap-filling with uniform properties (2011-02-08),

6. 7534732 - Semiconductor devices with copper interconnects and composite silicon nitride capping layers (2009-05-19),

7. 7300886 - Interlayer dielectric for charge loss improvement (2007-11-27),

8. 7023046 - Undoped oxide liner/BPSG for improved data retention (2006-04-04),

9. 7018896 - UV-blocking layer for reducing UV-induced charging of SONOS dual-bit flash memory devices in BEOL processing (2006-03-28),

10. 6875694 - Method of treating inlaid copper for improved capping layer adhesion without damaging porous low-k materials (2005-04-05),

11. 6818557 - Method of forming SiC capped copper interconnects with reduced hillock formation and improved electromigration resistance (2004-11-16),

12. 6809043 - Multi-stage, low deposition rate PECVD oxide (2004-10-26),

13. 6774432 - UV-blocking layer for reducing UV-induced charging of SONOS dual-bit flash memory devices in BEOL (2004-08-10),

14. 6686232 - Ultra low deposition rate PECVD silicon nitride (2004-02-03),

15. 6661067 - Nitrogen-plasma treatment for reduced nickel silicide bridging (2003-12-09),

Title: The Innovations of Robert A Huertas: Pioneering Nonvolatile Memory Elements

Introduction:

Robert A Huertas, a visionary inventor hailing from Hollister, CA, has left a significant mark in the field of nonvolatile memory technologies. With an impressive portfolio of 32 patents, his groundbreaking work has revolutionized resistive random-access memory (RRAM) devices. Let's delve into his latest patents and career highlights to understand the impact of his innovations.

Latest Patents:

1. Vertical oxide-oxide interface for forming-free, low power and low variability RRAM devices: Huertas' innovation in forming a resistive switching layer with a vertical interface has paved the way for low power resistive switching and reduced variability in RRAM devices. By confining defects along the interface between electrodes, he has enhanced the efficiency and performance of these devices.

2. Interfacial oxide used as switching layer in a nonvolatile resistive memory element: Huertas' nonvolatile resistive memory element incorporates a host oxide derived from an interfacial oxide layer. Through meticulous surface oxidation treatments, the interfacial oxide layer enhances the functionality and durability of the memory element.

Career Highlights:

Huertas' mastery in the field of nonvolatile memory technologies is underscored by his tenure at prestigious companies such as Advanced Micro Devices Corporation and Spansion Llc. His expertise and innovative spirit have propelled the development of cutting-edge memory solutions, solidifying his reputation as a trailblazer in the industry.

Collaborations:

Throughout his career, Huertas has collaborated with esteemed professionals such as Minh Van Ngo and Lu You. Together, they have synergized their talents to push the boundaries of memory technology, fostering a culture of innovation and excellence in their endeavors.

Conclusion:

In conclusion, Robert A Huertas stands as a pioneering figure in the realm of nonvolatile memory elements, with his inventive spirit and dedication shaping the landscape of modern memory technologies. His latest patents bear testimony to his ingenuity and commitment to pushing the boundaries of innovation, leaving an indelible mark on the field.

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