logo

For the Inventor, By the Inventor

Hollister, CA, United States of America

Robert A Huertas

This inventor holds 32 USPTO granted patents and 2 published patent applications, primarily in Flash Memory Technology. Top assignees: Advanced Micro Devices Corporation, Intermolecular, Inc., Spansion LLC.. Active years: 1999-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Robert A Huertas. Retrieved from https://idiyas.com/inventor/robert-a-huertas

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 32 

% Patents Active = 81.3

Average Co-Inventor Count = 4.3

ph-index = 10

Forward Citations = 352(Granted Patents)


Company Filing History:

goldMedal28 out of 13,185 
 
Advanced Micro Devices Corporation
 patents
silverMedal2 out of 726 
 
Intermolecular, Inc.
 patents
bronzeMedal2 out of 1,075 
 
Spansion LLC.
 patents
4. 1 out of 1 
 
Advanced Micro Devices, Inc. and Spansion LLC
 patent
5. 1 out of 834,601 
Other
 patents
where one patent can have more than one assignee

Years Active: 1999-2015

Loading Chart...
Areas of Expertise:
Flash Memory
Data Retention
Interlayer Dielectric
Copper Interconnects
UV-Blocking Layer
Low Dielectric Constant
PECVD Oxide
Hillock Suppression
Nickel Silicide Bridging
Void-Free Dielectric
Capping Layer Adhesion
Thermal Processing
32 patents (USPTO):Explore Patents
1. 9018037 - Vertical oxide-oxide interface for forming-free, low power and low variability RRAM devices (2015-04-28),
2. 8791445 - Interfacial oxide used as switching layer in a nonvolatile resistive memory element (2014-07-29),
3. 8415256 - Gap-filling with uniform properties (2013-04-09),
4. 8026169 - Cu annealing for improved data retention in flash memory devices (2011-09-27),
5. 7884030 - Gap-filling with uniform properties (2011-02-08),
6. 7534732 - Semiconductor devices with copper interconnects and composite silicon nitride capping layers (2009-05-19),
7. 7300886 - Interlayer dielectric for charge loss improvement (2007-11-27),
8. 7023046 - Undoped oxide liner/BPSG for improved data retention (2006-04-04),
9. 7018896 - UV-blocking layer for reducing UV-induced charging of SONOS dual-bit flash memory devices in BEOL processing (2006-03-28),
10. 6875694 - Method of treating inlaid copper for improved capping layer adhesion without damaging porous low-k materials (2005-04-05),
11. 6818557 - Method of forming SiC capped copper interconnects with reduced hillock formation and improved electromigration resistance (2004-11-16),
12. 6809043 - Multi-stage, low deposition rate PECVD oxide (2004-10-26),
13. 6774432 - UV-blocking layer for reducing UV-induced charging of SONOS dual-bit flash memory devices in BEOL (2004-08-10),
14. 6686232 - Ultra low deposition rate PECVD silicon nitride (2004-02-03),
15. 6661067 - Nitrogen-plasma treatment for reduced nickel silicide bridging (2003-12-09),

Title: The Innovations of Robert A Huertas: Pioneering Nonvolatile Memory Elements

Introduction:

Robert A Huertas, a visionary inventor hailing from Hollister, CA, has left a significant mark in the field of nonvolatile memory technologies. With an impressive portfolio of 32 patents, his groundbreaking work has revolutionized resistive random-access memory (RRAM) devices. Let's delve into his latest patents and career highlights to understand the impact of his innovations.

Latest Patents:

1. Vertical oxide-oxide interface for forming-free, low power and low variability RRAM devices: Huertas' innovation in forming a resistive switching layer with a vertical interface has paved the way for low power resistive switching and reduced variability in RRAM devices. By confining defects along the interface between electrodes, he has enhanced the efficiency and performance of these devices.

2. Interfacial oxide used as switching layer in a nonvolatile resistive memory element: Huertas' nonvolatile resistive memory element incorporates a host oxide derived from an interfacial oxide layer. Through meticulous surface oxidation treatments, the interfacial oxide layer enhances the functionality and durability of the memory element.

Career Highlights:

Huertas' mastery in the field of nonvolatile memory technologies is underscored by his tenure at prestigious companies such as Advanced Micro Devices Corporation and Spansion Llc. His expertise and innovative spirit have propelled the development of cutting-edge memory solutions, solidifying his reputation as a trailblazer in the industry.

Collaborations:

Throughout his career, Huertas has collaborated with esteemed professionals such as Minh Van Ngo and Lu You. Together, they have synergized their talents to push the boundaries of memory technology, fostering a culture of innovation and excellence in their endeavors.

Conclusion:

In conclusion, Robert A Huertas stands as a pioneering figure in the realm of nonvolatile memory elements, with his inventive spirit and dedication shaping the landscape of modern memory technologies. His latest patents bear testimony to his ingenuity and commitment to pushing the boundaries of innovation, leaving an indelible mark on the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…