The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2004
Filed:
Jun. 19, 2002
Minh Van Ngo, Fremont, CA (US);
Robert A. Huertas, Hollister, CA (US);
Dawn Hopper, San Jose, CA (US);
Hieu Pham, Milpitas, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A thin silicon nitride layer is deposited at an ultra low deposition rate by PECVD by reducing the NH flow rate and/or reducing the SiH flow rate. Embodiments include depositing a thin layer of silicon nitride, e.g., 100 Å or less, on a thin silicon oxide liner over a gate electrode, at an NH flow rate of 100 to 800 sccm, a SiH flow rate of 50 to 100 sccm and a reduced pressure of 0.8 to 1.8 Torr. Embodiments of the present invention further include depositing the silicon nitride layer in multiple deposition stages, e.g., depositing the silicon nitride layer in five deposition stages of 20 Å each.