The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2009
Filed:
Feb. 17, 2006
Minh Van Ngo, Fremont, CA (US);
Erik Wilson, Santa Clara, CA (US);
Hieu Pham, Milpitas, CA (US);
Robert Huertas, Hollister, CA (US);
LU You, San Jose, CA (US);
Hirokazu Tokuno, Cupertino, CA (US);
Alexander Nickel, Santa Clara, CA (US);
Minh Tran, Milpitas, CA (US);
Minh Van Ngo, Fremont, CA (US);
Erik Wilson, Santa Clara, CA (US);
Hieu Pham, Milpitas, CA (US);
Robert Huertas, Hollister, CA (US);
Lu You, San Jose, CA (US);
Hirokazu Tokuno, Cupertino, CA (US);
Alexander Nickel, Santa Clara, CA (US);
Minh Tran, Milpitas, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
Cu interconnects are formed with composite capping layers for reduced electromigration, improved adhesion between Cu and the capping layer, and reduced charge loss in associated non-volatile transistors. Embodiments include depositing a first relatively thin silicon nitride layer having a relatively high concentration of Si—H bonds on the upper surface of a layer of Cu for improved adhesion and reduced electromigration, and depositing a second relatively thick silicon nitride layer having a relatively low concentration of Si—H bonds on the first silicon nitride layer for reduced charge loss.