The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2014
Filed:
Mar. 01, 2012
Randall Higuchi, San Jose, CA (US);
Tony P. Chiang, Campbell, CA (US);
Ryan Clarke, San Jose, CA (US);
Vidyut Gopal, Sunnyvale, CA (US);
Imran Hashim, Saratoga, CA (US);
Robert Huertas, Hollister, CA (US);
Yun Wang, San Jose, CA (US);
Randall Higuchi, San Jose, CA (US);
Tony P. Chiang, Campbell, CA (US);
Ryan Clarke, San Jose, CA (US);
Vidyut Gopal, Sunnyvale, CA (US);
Imran Hashim, Saratoga, CA (US);
Robert Huertas, Hollister, CA (US);
Yun Wang, San Jose, CA (US);
Intermolecular, Inc., San Jose, CA (US);
Abstract
A nonvolatile resistive memory element includes a host oxide formed from an interfacial oxide layer. The interfacial oxide layer is formed on the surface of a deposited electrode layer via in situ or post-deposition surface oxidation treatments.