The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2006
Filed:
Jul. 11, 2003
Minh Van Ngo, Fremont, CA (US);
Angela Hui, Fremont, CA (US);
Ning Cheng, Cupertino, CA (US);
Jeyong Park, Sunnyvale, CA (US);
Jean Yee-mei Yang, Sunnyvale, CA (US);
Robert A. Huertas, Hollister, CA (US);
Tazrien Kamal, San Jose, CA (US);
Pei-yuan Gao, San Jose, CA (US);
Tyagamohan Gottipati, Sunnyvale, CA (US);
Minh Van Ngo, Fremont, CA (US);
Angela Hui, Fremont, CA (US);
Ning Cheng, Cupertino, CA (US);
Jeyong Park, Sunnyvale, CA (US);
Jean Yee-Mei Yang, Sunnyvale, CA (US);
Robert A. Huertas, Hollister, CA (US);
Tazrien Kamal, San Jose, CA (US);
Pei-Yuan Gao, San Jose, CA (US);
Tyagamohan Gottipati, Sunnyvale, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
Semiconductor devices with improved data retention are formed by depositing an undoped oxide liner on spaced apart transistors followed by in situ deposition of a BPSG layer. Embodiments include depositing an undoped silicon oxide liner derived from TEOS, as at a thickness of 400 Å to 600 Å, on transistors of a non-volatile semiconductor device, as by sub-atmospheric chemical vapor deposition, followed by depositing the BPSG layer in the same deposition chamber.