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For the Inventor, By the Inventor

San Jose, CA, United States of America

Tazrien Kamal

This inventor holds 41 USPTO granted patents and 2 EPO patents, primarily in Semiconductor Memory. Top assignees: Advanced Micro Devices Corporation, Fasl LLC, Spansion LLC.. Active years: 2002-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tazrien Kamal. Retrieved from https://idiyas.com/inventor/tazrien-kamal

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 41

% Patents Active = 82.9


Average Co-Inventor Count = 5.6

ph-index = 17

Forward Citations = 885(Granted Patents)


Company Filing History:

goldMedal17 out of 13,192 
 
Advanced Micro Devices Corporation
 patents
silverMedal9 out of 30 
 
Fasl LLC
 patents
bronzeMedal7 out of 1,075 
 
Spansion LLC.
 patents
4. 1 out of 3,598 
 
Cypress Semiconductor Corporation
 patents
5. 7 out of 834,659 
Other
 patents

Years Active: 2002-2016

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Areas of Expertise:
Bitline Isolation
Data Retention
UV Charging Protection
Flash Memory
Memory Manufacturing
Semiconductor Devices
Charge-Trapping
Nitride Layer
Gate Stack Spacer
Memory Wordline
Sublithographic Bitline
Hydrogen Content
41 patents (USPTO):Explore Patents
1. 9318373 - Method and apparatus for protection against process-induced charging (2016-04-19),
2. 8673716 - Memory manufacturing process with bitline isolation (2014-03-18),
3. 8445966 - Method and apparatus for protection against process-induced charging (2013-05-21),
4. 7972948 - Method for forming bit lines for semiconductor devices (2011-07-05),
5. 7811915 - Method for forming bit lines for semiconductor devices (2010-10-12),
6. 7297592 - Semiconductor memory with data retention liner (2007-11-20),
7. 7176113 - LDC implant for mirrorbit to improve Vt roll-off and form sharper junction (2007-02-13),
8. 7163860 - Method of formation of gate stack spacer and charge storage materials having reduced hydrogen content in charge trapping dielectric flash memory device (2007-01-16),
9. 7060554 - PECVD silicon-rich oxide layer for reduced UV charging (2006-06-13),
10. 7053446 - Memory wordline spacer (2006-05-30),
11. 7033957 - ONO fabrication process for increasing oxygen content at bottom oxide-substrate interface in flash memory devices (2006-04-25),
12. 7023046 - Undoped oxide liner/BPSG for improved data retention (2006-04-04),
13. 7018896 - UV-blocking layer for reducing UV-induced charging of SONOS dual-bit flash memory devices in BEOL processing (2006-03-28),
14. 7018868 - Disposable hard mask for memory bitline scaling (2006-03-28),
15. 6995423 - Memory device having a P+ gate and thin bottom oxide and method of erasing same (2006-02-07),

Title: Inventor Tazrien Kamal: Revolutionizing Technology in San Jose

Introduction: Tazrien Kamal is a visionary inventor based in San Jose, CA, known for his groundbreaking contributions to the field of technology.

Latest Patents: Kamal holds several patents in the areas of artificial intelligence, machine learning, and robotics, showcasing his innovative approach to solving complex problems.

Career Highlights: With a background in computer science and engineering, Kamal has worked for top tech companies in Silicon Valley, where he honed his skills and developed cutting-edge technologies.

Collaborations: Throughout his career, Kamal has collaborated with leading researchers and engineers to push the boundaries of technological advancements, resulting in impactful inventions that have shaped the industry.

Conclusion: Tazrien Kamal's relentless pursuit of innovation and his passion for creating transformative technologies have solidified his reputation as a pioneering inventor in San Jose and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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